Automatic Mouse Schedule v2.0 serial key or number

Automatic Mouse Schedule v2.0 serial key or number

Automatic Mouse Schedule v2.0 serial key or number

Automatic Mouse Schedule v2.0 serial key or number

日本(cm) 4 UK4 8 EU38 UK 1 ※こちらって異なる場合がございますので、 5 UK EU3 2 UK5 EU39 の前に必ずご確認ください ます。サイズはブランドや商品によ ■参考サイズ表 UK 5 EU 25 UK6 9 EU40 ■ご購入は一般的な参考サイズとなっており 4 EU34 UK 6. EU 26 10 EU41 ※サイトに掲載しているサイズ表 UK1 EU35 .5 EU 27 UK7 11 おります。 さい。 ※ ■商品説明 21 UK2 5 EU36 UK4 28 UK8 日~14日営業日程お時間を頂いての問合わせ」よりお問い合わせくだ - S EU 22 6 7 5 UK EU35 となります。商品のお届けまで10りになりたい場合は「商品についてル着用サイズ UK U EU 23 UK3 7 EU3 UK EUの商品は海外からのお取り寄せ商品より詳細なサイズ情報についてお知 ■商品サイズ/モデ - ■素材 タン) Martin(ジェイ ビー マル JB ■ブランド



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【ブランド】JOHN LAWRENCE SULLIVAN【ブランドカナ】ジョンローレンスサリバン【型番】【程度】B【サイズ】36【メインカラー】カーキ【素材・生地】コットン【キーワード】  /04/28セカンドストリート長浜店 【】

Источник: [manicapital.com]
, Automatic Mouse Schedule v2.0 serial key or number

Serial presence detect

In computing, serial presence detect (SPD) is a standardized way to automatically access information about a memory module. Earlier pin SIMMs included five pins that provided five bits of parallel presence detect (PPD) data, but the pin DIMM standard changed to a serial presence detect to encode much more information.[1]

When an ordinary modern computer is turned on, it starts by doing a power-on self-test (POST). Since about the mids, this process includes automatically configuring the hardware currently present. SPD is a memory hardware feature that makes it possible for the computer to know what memory is present, and what memory timings to use to access the memory.

Some computers adapt to hardware changes completely automatically. In most cases, there is a special optional procedure for accessing BIOS parameters, to view and potentially make changes in settings. It may be possible to control how the computer uses the memory SPD data—to choose settings, selectively modify memory timings, or possibly to completely over-ride the SPD data (see overclocking).

Stored information[edit]

For a memory module to support SPD, the JEDEC standards require that certain parameters be in the lower bytes of an EEPROM located on the memory module. These bytes contain timing parameters, manufacturer, serial number and other useful information about the module. Devices utilizing the memory automatically determine key parameters of the module by reading this information. For example, the SPD data on an SDRAM module might provide information about the CAS latency so the system can set this correctly without user intervention.

The SPD EEPROM is accessed using SMBus, a variant of the I²C protocol. This reduces the number of communication pins on the module to just two: a clock signal and a data signal. The EEPROM shares ground pins with the RAM, has its own power pin, and has three additional pins (SA0–2) to identify the slot, which are used to assign the EEPROM a unique address in the range 0x50–0x Not only can the communication lines be shared among 8 memory modules, the same SMBus is commonly used on motherboards for system health monitoring tasks such as reading power supply voltages, CPU temperatures, and fan speeds.

SPD EEPROMs also respond to I²C addresses 0x30–0x37 if they have not been write protected, and an extension (TSE series) uses addresses 0x18–0x1F to access an optional on-chip temperature sensor. All those values are seven-bit I²C addresses formed by a Device Type Identifier Code prefix (DTIC) with SA to read () from slot 3, one uses . With a final R/W bit it forms the 8-bit Device Select Code.[2] Note that the semantics of slot-id is different for write-protection operations: for them they can be not passed by the SA pins at all.[3]

Before SPD, memory chips were spotted with parallel presence detect (PPD). PPD used a separate pin for each bit of information, which meant that only the speed and density of the memory module could be stored because of the limited space for pins.

SDR SDRAM[edit]

Memory device on an SDRAM module, containing SPD data (red circled)

The first SPD specification was issued by JEDEC and tightened up by Intel as part of its PC memory specification.[4] Most values specified are in binary-coded decimal form. The most significant nibble can contain values from 10 to 15, and in some cases extends higher. In such cases, the encodings for 1, 2 and 3 are instead used to encode 16, 17 and A most significant nibble of 0 is reserved to represent "undefined".

The SPD ROM defines up to three DRAM timings, for three CAS latencies specified by set bits in byte First comes the highest CAS latency (fastest clock), then two lower CAS latencies with progressively lower clock speeds.

Byte Bit Notes
(dec.)(hex.) 76543210
00x00Number of bytes presentTypically
10x01log2(size of SPD EEPROM)Typically 8 ( bytes)
20x02Basic memory type (4: SPD SDRAM)
30x03Bank 2 row address bits (0–15)Bank 1 row address bits (1–15)Bank 2 is 0 if same as bank 1
40x04Bank 2 column address bits (0–15)Bank 1 column address bits (1–15)Bank 2 is 0 if same as bank 1
50x05Number of RAM banks on module (1–)Commonly 1 or 2
60x06Module data width low byteCommonly 64, or 72 for ECC DIMMs
70x07Module data width high byte0, unless width ≥ bits
80x08Interface voltage level of this assembly (not the same as Vcc supply voltage) (0–4)Decoded by table lookup
90x09Nanoseconds (0–15)Tenths of nanoseconds (–)Clock cycle time at highest CAS latency
100x0aNanoseconds (0–15)Tenths of nanoseconds (–)SDRAM access time from clock (tAC)
110x0bDIMM configuration type (0–2): non-ECC, parity, ECCTable lookup
120x0cSelfRefresh period (0–5): 64, , , 32, 16, 8&#;kHzRefresh requirements
130x0dBank 2 2×Bank 1 primary SDRAM width (1–, usually 8)Width of bank 1 data SDRAM devices. Bank 2 may be same width, or 2× width if bit 7 is set.
140x0eBank 2 2×Bank 1 ECC SDRAM width (0–)Width of bank 1 ECC/parity SDRAM devices. Bank 2 may be same width, or 2× width if bit 7 is set.
150x0fClock delay for random column readsTypically 1
160x10Page8421Burst lengths supported (bitmap)
170x11Banks per SDRAM device (1–)Typically 2 or 4
180x127654321CAS latencies supported (bitmap)
190x136543210CS latencies supported (bitmap)
200x146543210WE latencies supported (bitmap)
210x15RedundantDiff. clockRegistered dataBuffered dataOn-card PLLRegistered addr.Buffered addr.Memory module feature bitmap
220x16Upper Vcc (supply voltage) toleranceLower Vcc (supply voltage) toleranceWrite/&#;1&#;read burstPrecharge allAuto-&#;prechargeEarly RAS prechargeMemory chip feature support bitmap
230x17Nanoseconds (4–18)Tenths of nanoseconds (0–9: –)Clock cycle time at medium CAS latency
240x18Nanoseconds (4–18)Tenths of nanoseconds (0–9: –)Data access time from clock (tAC)
250x19Nanoseconds (1–63)&#;ns (0–3: –)Clock cycle time at short CAS latency.
260x1aNanoseconds (1–63)&#;ns (0–3: –)Data access time from clock (tAC)
270x1bNanoseconds (1–)Minimum row precharge time (tRP)
280x1cNanoseconds (1–)Minimum row active–row active delay (tRRD)
290x1dNanoseconds (1–)Minimum RAS to CAS delay (tRCD)
300x1eNanoseconds (1–)Minimum active to precharge time (tRAS)
310x1f&#;MiB&#;MiB&#;MiB64&#;MiB32&#;MiB16&#;MiB8&#;MiB4&#;MiBModule bank density (bitmap). Two bits set if different size banks.
320x20Sign (1: −)Nanoseconds (0–7)Tenths of nanoseconds (0–9: –)Address/command setup time from clock
330x21Sign (1: −)Nanoseconds (0–7)Tenths of nanoseconds (0–9: –)Address/command hold time after clock
340x22Sign (1: −)Nanoseconds (0–7)Tenths of nanoseconds (0–9: –)Data input setup time from clock
350x23Sign (1: −)Nanoseconds (0–7)Tenths of nanoseconds (0–9: –)Data input hold time after clock
36–610x24–0x3d Reserved For future standardization
620x3eMajor revision (0–9)Minor revision (0–9)SPD revision level; e.g.,
630x3fChecksumSum of bytes 0–62, not then negated
64–710x40–47Manufacturer JEDEC id.Stored little-endian, trailing zero-padded
720x48Module manufacturing locationVendor-specific code
73–900x49–0x5aModule part numberASCII, space-padded
91–920x5b–0x5cModule revision codeVendor-specific code
930x5dTens of years (0–9: 0–90)Years (0–9)Manufacturing date (YYWW)
940x5eTens of weeks (0–5: 0–50)Weeks (0–9)
95–980x5f–0x62Module serial numberVendor-specific code
99–0x63–0x7fManufacturer-specific dataCould be enhanced performance profile
0x7e0x66 [sic] for 66&#;MHz, 0x64 for &#;MHzIntel frequency support
0x7fCLK0CLK1CLK3CLK390/&#;°CCL3CL2Concurrent APIntel feature bitmap

DDR SDRAM[edit]

The DDR DIMM SPD format is an extension of the SDR SDRAM format. Mostly, parameter ranges are rescaled to accommodate higher speeds.

Byte Bit Notes
(dec.)(hex.) 76543210
00x00Number of bytes writtenTypically
10x01log2(size of SPD EEPROM)Typically 8 ( bytes)
20x02Basic memory type (7 = DDR SDRAM)
30x03Bank 2 row address bits (0–15)Bank 1 row address bits (1–15)Bank 2 is 0 if same as bank 1.
40x04Bank 2 column address bits (0–15)Bank 1 column address bits (1–15)Bank 2 is 0 if same as bank 1.
50x05Number of RAM banks on module (1–)Commonly 1 or 2
60x06Module data width low byteCommonly 64, or 72 for ECC DIMMs
70x07Module data width high byte0, unless width ≥ bits
80x08Interface voltage level of this assembly (not the same as Vcc supply voltage) (0–5)Decoded by table lookup
90x09Nanoseconds (0–15)Tenths of nanoseconds (–)Clock cycle time at highest CAS latency.
100x0aTenths of nanoseconds (–)Hundredths of nanoseconds (–)SDRAM access time from clock (tAC)
110x0bDIMM configuration type (0–2): non-ECC, parity, ECCTable lookup
120x0cSelfRefresh period (0–5): 64, , , 32, 16, 8&#;kHzRefresh requirements
130x0dBank 2 2×Bank 1 primary SDRAM width (1–)Width of bank 1 data SDRAM devices. Bank 2 may be same width, or 2× width if bit 7 is set.
140x0eBank 2 2×Bank 1 ECC SDRAM width (0–)Width of bank 1 ECC/parity SDRAM devices. Bank 2 may be same width, or 2× width if bit 7 is set.
150x0fClock delay for random column readsTypically 1
160x10Page8421Burst lengths supported (bitmap)
170x11Banks per SDRAM device (1–)Typically 4
180x124321CAS latencies supported (bitmap)
190x136543210CS latencies supported (bitmap)
200x146543210WE latencies supported (bitmap)
210x15xDiff clockFET switch external enableFET switch on-board enableOn-card PLLRegisteredBufferedMemory module feature bitmap
220x16Fast APConcurrent auto prechargeUpper Vcc (supply voltage) toleranceLower Vcc (supply voltage) toleranceIncludes weak driverMemory chip feature bitmap
230x17Nanoseconds (0–15)Tenths of nanoseconds (–)Clock cycle time at medium CAS latency.
240x18Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Data access time from clock (tAC)
250x19Nanoseconds (0–15)Tenths of nanoseconds (–)Clock cycle time at short CAS latency.
260x1aTenths of nanoseconds (–)Hundredths of nanoseconds (–)Data access time from clock (tAC)
270x1bNanoseconds (1–63)&#;ns (0–)Minimum row precharge time (tRP)
280x1cNanoseconds (1–63)&#;ns (0–)Minimum row active–row active delay (tRRD)
290x1dNanoseconds (1–63)&#;ns (0–)Minimum RAS to CAS delay (tRCD)
300x1eNanoseconds (1–)Minimum active to precharge time (tRAS)
310x1f&#;MiB&#;MiB&#;MiB64&#;MiB32&#;MiB16&#;MiB/
4&#;GiB
8&#;MiB/
2&#;GiB
4&#;MiB/
1&#;GiB
Module bank density (bitmap). Two bits set if different size banks.
320x20Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Address/command setup time from clock
330x21Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Address/command hold time after clock
340x22Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Data input setup time from clock
350x23Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Data input hold time after clock
36–40 0x24–0x28Reserved Superset information
410x29Nanoseconds (1–)Minimum active to active/refresh time (tRC)
420x2aNanoseconds (1–)Minimum refresh to active/refresh time (tRFC)
430x2bNanoseconds (1–63, or no maximum)&#;ns (0–)Maximum clock cycle time (tCK max.)
440x2cHundredths of nanoseconds (–)Maximum skew, DQS to any DQ. (tDQSQ max.)
450x2dTenths of nanoseconds (–)Hundredths of nanoseconds (–)Read data hold skew factor (tQHS)
460x2e Reserved For future standardization
470x2fHeightHeight of DIMM module, table lookup
48–610x30–0x3d Reserved For future standardization
620x3eMajor revision (0–9)Minor revision (0–9)SPD revision level, or
630x3fChecksumSum of bytes 0–62, not then negated
64–710x40–47Manufacturer JEDEC id.Stored little-endian, trailing zero-padded
720x48Module manufacturing locationVendor-specific code
73–900x49–0x5aModule part numberASCII, space-padded
91–920x5b–0x5cModule revision codeVendor-specific code
930x5dTens of years (0–90)Years (0–9)Manufacturing date (YYWW)
940x5eTens of weeks (0–50)Weeks (0–9)
95–980x5f–0x62Module serial numberVendor-specific code
99–0x63–0x7fManufacturer-specific dataCould be enhanced performance profile

DDR2 SDRAM[edit]

The DDR2 SPD standard makes a number of changes, but is roughly similar to the above. One notable deletion is the confusing and little-used support for DIMMs with two ranks of different sizes.

For cycle time fields (bytes 9, 23, 25 and 49), which are encoded in BCD, some additional encodings are defined for the tenths digit to represent some common timings exactly:

HexBinarySignificance
A (¼)
B (⅓)
C (⅔)
D (¾)
E (⅞, nVidia XMP extension)
FReserved
Byte Bit Notes
DecHex76543210
00x00Number of bytes writtenTypically
10x01log2(size of SPD EEPROM)Typically 8 ( bytes)
20x02Basic memory type (8 = DDR2 SDRAM)
30x03ReservedRow address bits (1–15)
40x04ReservedColumn address bits (1–15)
50x05Vertical heightStack?ConC?Ranks−1 (1–8)Commonly 0 or 1, meaning 1 or 2
60x06Module data widthCommonly 64, or 72 for ECC DIMMs
70x07Reserved
80x08Interface voltage level of this assembly (not the same as Vcc supply voltage) (0–5)Decoded by table lookup.
Commonly 5 = SSTL &#;V
90x09Nanoseconds (0–15)Tenths of nanoseconds (–)Clock cycle time at highest CAS latency.
100x0aTenths of nanoseconds (–)Hundredths of nanoseconds (–)SDRAM access time from clock (tAC)
110x0bDIMM configuration type (0–2): non-ECC, parity, ECCTable lookup
120x0cSelfRefresh period (0–5): 64, , , 32, 16, 8&#;kHzRefresh requirements
130x0dPrimary SDRAM width (1–)Commonly 8 (module built from ×8 parts) or 16
140x0eECC SDRAM width (0–)Width of bank ECC/parity SDRAM devices. Commonly 0 or 8.
150x0fReserved
160x1084Burst lengths supported (bitmap)
170x11Banks per SDRAM device (1–)Typically 4 or 8
180x12765432CAS latencies supported (bitmap)
190x13Reserved
200x14Mini-UDIMMMini-RDIMMMicro-DIMMSO-DIMMUDIMMRDIMMDIMM type of this assembly (bitmap)
210x15Module is analysis probeFET switch external enableMemory module feature bitmap
220x16Includes weak driverMemory chip feature bitmap
230x17Nanoseconds (0–15)Tenths of nanoseconds (–)Clock cycle time at medium CAS latency.
240x18Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Data access time from clock (tAC)
250x19Nanoseconds (0–15)Tenths of nanoseconds (–)Clock cycle time at short CAS latency.
260x1aTenths of nanoseconds (–)Hundredths of nanoseconds (–)Data access time from clock (tAC)
270x1bNanoseconds (1–63)1/4 ns (0–)Minimum row precharge time (tRP)
280x1cNanoseconds (1–63)1/4 ns (0–)Minimum row active–row active delay (tRRD)
290x1dNanoseconds (1–63)1/4 ns (0–)Minimum RAS to CAS delay (tRCD)
300x1eNanoseconds (1–)Minimum active to precharge time (tRAS)
310x1f&#;MiB&#;MiB&#;MiB16&#;GiB8&#;GiB4&#;GiB2&#;GiB1&#;GiBSize of each rank (bitmap).
320x20Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Address/command setup time from clock
330x21Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Address/command hold time after clock
340x22Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Data input setup time from strobe
350x23Tenths of nanoseconds (–)Hundredths of nanoseconds (–)Data input hold time after strobe
360x24Nanoseconds (1–63)&#;ns (0–)Minimum write recovery time (tWR)
370x25Nanoseconds (1–63)&#;ns (0–)Internal write to read command delay (tWTR)
380x26Nanoseconds (1–63)&#;ns (0–)Internal read to precharge command delay (tRTP)
390x27ReservedReserved for "memory analysis probe characteristics"
400x28tRC fractional ns (0–5):
0, , , , ,
tRFC fractional ns (0–5):
0, , , , ,
tRFC + &#;nsExtension of bytes 41 and
410x29Nanoseconds (1–)Minimum active to active/refresh time (tRC)
420x2aNanoseconds (1–)Minimum refresh to active/refresh time (tRFC)
430x2bNanoseconds (0–15)Tenths of nanoseconds (–)Maximum clock cycle time (tCK max)
440x2cHundredths of nanoseconds (–)Maximum skew, DQS to any DQ. (tDQSQ max)
450x2dHundredths of nanoseconds (–)Read data hold skew factor (tQHS)
460x2eMicroseconds (1–)PLL relock time
47–610x2f–0x3dReservedFor future standardization.
620x3eMajor revision (0–9)Minor revision (–)SPD revision level, usually
630x3fChecksumSum of bytes 0–62, not negated
64–710x40–47Manufacturer JEDEC IDStored little-endian, trailing zero-pad
720x48Module manufacturing locationVendor-specific code
73–900x49–0x5aModule part numberASCII, space-padded (limited to (,-,), A–Z, a–z, 0–9, space)
91–920x5b–0x5cModule revision codeVendor-specific code
930x5dYears since (0–)Manufacturing date (YYWW)
940x5eWeeks (1–52)
95–980x5f–0x62Module serial numberVendor-specific code
99–0x63–0x7fManufacturer-specific dataCould be enhanced performance profile

DDR3 SDRAM[edit]

The DDR3 SDRAM standard significantly overhauls and simplifies the SPD contents layout. Instead of a number of BCD-encoded nanosecond fields, some "timebase" units are specified to high precision, and various timing parameters are encoded as multiples of that base unit.[8] Further, the practice of specifying different time values depending on the CAS latency has been dropped; now there are just a single set of timing parameters.

Revision lets some parameters be expressed as a "medium time base" value plus a (signed, − +) "fine time base" correction. Generally, the medium time base is 1/8 ns ( ps), and the fine time base is 1, or 5 ps. For compatibility with earlier versions that lack the correction, the medium time base number is usually rounded up and the correction is negative. Values that work this way are:

MTB byteFTB byteValue
1234tCKmin, minimum clock period
1635tAAmin, minimum CAS latency time
1836tRCDmin, minimum RAS# to CAS# delay
2037tRPmin, minimum row precharge delay
21, 2338tRCmin, minimum active to active/precharge delay
Byte Bit Notes
DecHex76543210
00x00Exclude serial from CRCSPD bytes total (undef/)SPD bytes used (undef///)
10x01SPD major revisionSPD minor revision, , or
20x02Basic memory type (11 = DDR3 SDRAM)Type of RAM chips
30x03ReservedModule typeType of module; e.g., 2 = Unbuffered DIMM, 3 = SO-DIMM, 11=LRDIMM
40x04Bank address bits−3log2(bits per chip)−28Zero means 8 banks, Mibit.
50x05Row address bits−12Column address bits−9
60x06Reserved&#;V&#;VNot &#;VModules voltages supported. &#;V is default.
70x07ranks−1log2(I/O bits/chip)−2Module organization
80x08ECC bits (=8)log2(data bits)−30x03 for bit, non-ECC DIMM.
90x09Dividend, picoseconds (1–15)Divisor, picoseconds (1–15)Fine Time Base, dividend/divisor
100x0aDividend, nanoseconds (1–)Medium Time Base, dividend/divisor; commonly 1/8
110x0bDivisor, nanoseconds (1–)
120x0cMinimum cycle time tCKminIn multiples of MTB
130x0dReserved
140x0e1110987654CAS latencies supported (bitmap)
150x0f18171615141312
160x10Minimum CAS latency time, tAAminIn multiples of MTB; e.g., 80/8 ns.
170x11Minimum write recovery time, tWRminIn multiples of MTB; e.g., /8 ns.
180x12Minimum RAS to CAS delay time, tRCDminIn multiples of MTB; e.g., /8 ns.
190x13Minimum row to row active delay time, tRRDminIn multiples of MTB; e.g., 60/8 ns.
200x14Minimum row precharge time, tRPminIn multiples of MTB; e.g., /8 ns.
210x15tRCmin, bits tRASmin, bits Upper 4 bits of bytes 23 and 22
220x16Minimum active to time, tRASmin, bits In multiples of MTB; e.g., /8 ns.
230x17Minimum active to active/refresh, tRCmin, bits In multiples of MTB; e.g., /8 ns.
240x18Minimum refresh recovery delay, tRFCmin, bits In multiples of MTB; e.g., /8 ns.
250x19Minimum refresh recovery delay, tRFCmin, bits
260x1aMinimum internal write to read delay, tWTRminIn multiples of MTB; e.g., 60/8 ns.
270x1bMinimum internal read to precharge delay, tRTPminIn multiples of MTB; e.g., 60/8 ns.
280x1cReservedtFAWmin, bits In multiples of MTB; e.g., /8 ns.
290x1dMinimum four activate window delay tFAWmin, bits
300x1eDLL-offRZQ/7RZQ/6SDRAM optional features support bitmap
310x1fPASRODTSASRETR 1×ETR (95&#;°C)SDRAM thermal and refresh options
320x20PresentAccuracy (TBD; currently 0 = undefined)DIMM thermal sensor present?
330x21Nonstd.Die countSignal loadNonstandard SDRAM device type (e.g., stacked die)
340x22tCKmin correction (new for )Signed multiple of FTB, added to byte 12
350x23tAAmin correction (new for )Signed multiple of FTB, added to byte 16
360x24tRCDmin correction (new for )Signed multiple of FTB, added to byte 18
370x25tRPmin correction (new for )Signed multiple of FTB, added to byte 20
380x26tRCmin correction (new for )Signed multiple of FTB, added to byte 23
39–400x27–0x28ReservedFor future standardization.
410x29Vendor specifictMAWMaximum Activate Count (MAC) (untested/k/k//k/reserved/∞)For row hammer mitigation
42–590x2a–0x3bReservedFor future standardization.
600x3cModule height, mm (1–31, >45)Module nominal height
610x3dBack thickness, mm (1–16)Front thickness, mm (1–16)Module thickness, value = ceil(mm) − 1
620x3eDesignRevisionJEDEC design numberJEDEC reference design used (=none)
63–0x3f–0x74Module-specific sectionDiffers between registered/unbuffered
0x75Module manufacturer ID, lsbyteAssigned by JEP
0x76Module manufacturer ID, msbyte
0x77Module manufacturing locationVendor-specific code
0x78Tens of yearsYearsManufacturing year (BCD)
0x79Tens of weeksWeeksManufacturing week (BCD)
0x7a–0x7dModule serial numberVendor-specific code
0x7e–0x7fSPD CRCIncludes bytes 0– or 0–; see byte 0 bit 7
0x80–0x91Module part numberASCII subset, space-padded
0x92–0x93Module revision codeVendor-defined
0x94–0x95DRAM manufacturer IDAs distinct from module manufacturer
0x96–0xAFManufacturer-specific data
0xB0–0xFFAvailable for customer use

The memory capacity of a module can be computed from bytes 4, 7 and 8. The module width (byte 8) divided by the number of bits per chip (byte 7) gives the number of chips per rank. That can then be multiplied by the per-chip capacity (byte 4) and the number of ranks of chips on the module (usually 1 or 2, from byte 7).

DDR4 SDRAM[edit]

The DDR4 SDRAM "Annex L" standard for SPD changes the EEPROM module used. Instead of the old AT24Ccompatible byte EEPROMs, JEDEC now defines a new nonstandard EE type with two pages at the SMBus level each with bytes. The new memory still uses the old 0xx57 addresses, but two additional address at 0x36 (SPA0) and 0x37 (SPA1) are now used to receive commands to select the currently-active page for the bus, a form of bank switching.[11] Internally each logical page is further divided into two physical blocks of bytes each, totaling four blocks and bytes.[12] Other semantics for "special" address ranges remain the same, although write protection is now addressed by blocks and a high voltage at SA0 is now required to change its status.[13]

Annex L defines a few different layouts that can be plugged into a byte (of which a maximum of bytes are defined) template, depending on the type of the memory module. The bit definitions are similar to DDR3.[12]

Byte Bit Notes
DecHex76543210
00x00SPD bytes used
10x01SPD revision nTypically 0x10, 0x11, 0x12
20x02Basic memory type (12 = DDR4 SDRAM)Type of RAM chips
30x03ReservedModule typeType of module; e.g., 2 = Unbuffered DIMM, 3 = SO-DIMM, 11=LRDIMM
40x04Bank group bitsBank address bits−2Total SDRAM capacity per die in MbZero means no bank groups, 4 banks, Mibit.
50x05ReservedRow address bits−12Column address bits−9
60x06Primary SDRAM package typeDie countReservedSignal loading
70x07ReservedMaximum activate window (tMAW)Maximum activate count (MAC)SDRAM optional features
80x08ReservedSDRAM thermal and refresh options
90x09Post package repair (PPR)Soft PPRReservedOther SDRAM optional features
100x0aSDRAM package typeDie count−1DRAM density ratioSignal loadingSecondary SDRAM package type
110x0bReservedEndurant flagOperable flagModule nominal voltage, VDD
120x0cReservedRank mixPackage ranks per DIMM−1SDRAM device widthModule organization
130x0dReservedBus width extensionPrimary bus widthModule memory bus width in bits
140x0eThermal sensorReservedModule thermal sensor
150x0fReservedExtended base module type
160x10Reserved
170x11ReservedMedium timebase (MTB)Fine timebase (FTB)Measured in ps.
180x12Minimum SDRAM cycle time, tCKAVGminIn multiples of MTB; e.g., /8 ns.
190x13Maximum SDRAM cycle time, tCKAVGmaxIn multiples of MTB; e.g., 60/8 ns.
200x141413121110987CAS latencies supported bit-mask
210x152221201918171615CAS latencies supported bit-mask
220x163029282726252423CAS latencies supported bit-mask
230x17Low CL rangeReserved363534333231CAS latencies supported bit-mask
240x18Minimum CAS latency time, tAAminIn multiples of MTB; e.g., /8 ns.
250x19Minimum RAS to CAS delay time, tRFCminIn multiples of MTB; e.g., 60/8 ns.
260x1aMinimum row precharge delay time, tRPminIn multiples of MTB; e.g., 60/8 ns.
270x1bUpper nibbles for tRASmin and tRCmin
280x1cMinimum active to precharge delay time, tRASmin least significant byteIn multiples of MTB
290x1dMinimum active to active/refresh delay time, tRCmin least significant byteIn multiples of MTB
300x1eMinimum refresh recovery delay time, tRFC1min least significant byteIn multiples of MTB
310x1fMinimum refresh recovery delay time, tRFC1min most significant byteIn multiples of MTB
320x20Minimum refresh recovery delay time, tRFC2min least significant byteIn multiples of MTB
330x21Minimum refresh recovery delay time, tRFC2min most significant byteIn multiples of MTB
340x22Minimum refresh recovery delay time, tRFC4min least significant byteIn multiples of MTB
350x23Minimum refresh recovery delay time, tRFC4min most significant byteIn multiples of MTB
360x24ReservedtFAWmin most significant nibble
370x25Minimum four activate window delay time, tFAWmin least significant byteIn multiples of MTB
380x26Minimum activate to activate delay time, tRRD_Smin, different bank groupIn multiples of MTB
390x27Minimum activate to activate delay time, tRRD_Smin, same bank groupIn multiples of MTB
400x28Minimum CAS to CAS delay time, tCCD_Lmin, same bank groupIn multiples of MTB
410x29Upper nibble for tWRmin
420x2aMinimum write recovery time, tWRminIn multiples of MTB
430x2bUpper nibbles for tWTRmin
440x2cMinimum write to read time, tWTR_Smin, different bank groupIn multiples of MTB
450x2dMinimum write to read time, tWTR_Lmin, same bank groupIn multiples of MTB
49–590x2e–0x3bReservedBase configuration section
0x3c-0x4dConnector to SDRAM bit mapping
78–0x4e–0x74ReservedBase configuration section
0x75Fine offset for minimum CAS to CAS delay time, tCCD_Lmin, same bankTwo's complement multiplier for FTB units
0x76Fine offset for minimum activate to activate delay time, tRRD_Lmin, same bank groupTwo's complement multiplier for FTB units
0x77Fine offset for minimum activate to activate delay time, tRRD_Smin, different bank groupTwo's complement multiplier for FTB units
0x78Fine offset for minimum active to active/refresh delay time, tRCminTwo's complement multiplier for FTB units
0x79Fine offset for minimum row precharge delay time, tRPminTwo's complement multiplier for FTB units
0x7aFine offset for minimum RAS to CAS delay time, tRCDminTwo's complement multiplier for FTB units
0x7bFine offset for minimum CAS latency time, tAAminTwo's complement multiplier for FTB units
0x7cFine offset for SDRAM maximum cycle time, tCKAVGmaxTwo's complement multiplier for FTB units
0x7dFine offset for SDRAM minimum cycle time, tCKAVGminTwo's complement multiplier for FTB units
0x7eCyclic rendundancy code (CRC) for base config section, least significant byteCRC16 algorithm
0x7fCyclic rendundancy code (CRC) for base config section, most significant byteCRC16 algorithm
0x80–0xbfModule-specific sectionDependent upon memory module family (UDIMM, RDIMM, LRDIMM)
0xc0–0xffHybrid memory architecture specific parameters
0x–0x13fExtended function parameter block
0xxModule manufacturerSee JEP
0xModule manufacturing locationManufacturer-defined manufacturing location code
0xModule manufacturing yearRepresented in Binary Coded Decimal (BCD)
0xModule manufacturing weekRepresented in Binary Coded Decimal (BCD)
0xxModule serial numberManufacturer-defined format for a unique serial number across part numbers
0xx15cModule part numberASCII part number, unused digits should be set to 0x20
0x15dModule revision codeManufacturer-defined revision code
0x15e-0x15fDRAM manufacturer ID codeSee JEP
0xDRAM steppingManufacturer-defined stepping or 0xFF if not used
0x–0x17dManufacturer's specific data
0x17e-0x17fReserved

Extensions[edit]

The JEDEC standard only specifies some of the SPD bytes. The truly critical data fits into the first 64 bytes,[6][7][15][16][17] while some of the remainder is earmarked for manufacturer identification. However, a byte EEPROM is generally provided. A number of uses have been made of the remaining space.

Enhanced Performance Profiles (EPP)[edit]

Memory generally comes with conservative timing recommendations in the SPD ROM, to ensure basic functionality on all systems. Enthusiasts often spend considerable time manually adjusting the memory timings for higher speed.

Enhanced Performance Profiles is an extension of SPD, developed by Nvidia and Corsair, which includes additional information for higher-performance operation of DDR2 SDRAM, including supply voltages and command timing information not included in the JEDEC SPD spec. The EPP information is stored in the same EEPROM, but in bytes , which are unused by standard DDR2 SPD.[18]

BytesSizeFull profilesAbbreviated profiles
99–5EPP header
6Profile FP1Profile AP1
6Profile AP2
6Profile FP2Profile AP3
6Profile AP4

The parameters are particularly designed to fit the memory controller on the nForce 5, nForce 6 and nForce 7 chipsets. Nvidia encourages support for EPP in the BIOS for its high-end motherboard chipsets. This is intended to provide "one-click overclocking" to get better performance with minimal effort.

Nvidia's name for EPP memory that has been qualified for performance and stability is "SLI-ready memory".[19] The term "SLI-ready-memory" has caused some confusion, as it has nothing to do with SLI video. One can use EPP/SLI memory with a single video card (even a non-Nvidia card), and one can run a multi-card SLI video setup without EPP/SLI memory.

An extended version, EPP , supports DDR3 memory as well.[20]

Extreme Memory Profile (XMP)[edit]

A similar, Intel-developed JEDEC SPD extension was developed for DDR3 SDRAM DIMMs, later used in DDR4 also. XMP uses bytes –, which are unallocated by JEDEC, to encode higher-performance memory timings.[21]

Later, AMD developed AMP, an equivalent technology to XMP, for use in its "Radeon Memory" line of memory modules optimized for use in AMD platforms.[22][23] Furthermore, motherboard developers implemented their own technologies to allow their AMD-based motherboards to read XMP profiles: MSI offers A-XMP,[24] ASUS has DOCP (Dynamic Over Clock Profiles), and Gigabyte has EOCP (Extended Over Clock Profiles).[25]

DDR3 BytesSizeUse
10XMP header
33XMP profile 1 ("enthusiast" settings)
36XMP profile 2 ("extreme" settings)

The header contains the following data. Most importantly, it contains a "medium timebase" value MTB, as a rational number of nanoseconds (common values are 1/8, 1/12 and 1/16 ns). Many other later timing values are expressed as an integer number of MTB units.

Also included in the header is the number of DIMMs per memory channel that the profile is designed to support; including more DIMMs may not work well.

DDR3 ByteBitsUse
XMP magic number byte 1 0x0C
XMP magic number byte 2 0x4A
0Profile 1 enabled (if 0, disabled)
1Profile 2 enabled
Profile 1 DIMMs per channel (1–4 encoded as 0–3)
Profile 2 DIMMs per channel
Reserved
XMP minor version number (x.0 or x.1)
XMP major version number (0.x or 1.x)
Medium timebase dividend for profile 1
Medium timebase divisor for profile 1 (MTB = dividend/divisor ns)
Medium timebase dividend for profile 2 (e.g. 8)
Medium timebase divisor for profile 2 (e.g. 1, giving MTB = 1/8 ns)
Reserved
DDR3 Byte 1DDR3 Byte 2BitsUse
0Module Vdd voltage twentieths ( or )
Module Vdd voltage tenths (–)
Module Vdd voltage units (0–2)
7Reserved
Minimum SDRAM clock period tCKmin (MTB units)
Minimum CAS latency time tAAmin (MTB units)
CAS latencies supported (bitmap, 4–11 encoded as bits 0–7)
CAS latencies supported (bitmap, 12–18 encoded as bits 0–6)
7Reserved
Minimum CAS write latency time tCWLmin (MTB units)
Minimum row precharge delay time tRPmin (MTB units)
Minimum RAS to CAS delay time tRCDmin (MTB units)
Minimum write recovery time tWRmin (MTB units)
tRASmin upper nibble (bits )
tRCmin upper nibble (bits )
Minimum active to precharge delay time tRASmin bits (MTB units)
Minimum active to active/refresh delay time tRCmin bits (MTB units)
Maximum average refresh interval tREFI lsbyte (MTB units)
Maximum average refresh interval tREFI msbyte (MTB units)
Minimum refresh recovery delay time tRFCmin lsbyte (MTB units)
Minimum refresh recovery delay time tRFCmin msbyte (MTB units)
Minimum internal read to precharge command delay time tRTPmin (MTB units)
Minimum row active to row active delay time tRRDmin (MTB units)
tFAWmin upper nibble (bits )
Reserved
Minimum four activate window delay time tFAWmin bits (MTB units)
Minimum internal write to read command delay time tWTRmin (MTB units)
Write to read command turnaround time adjustment (0–7 clock cycles)
3Write to read command turnaround adjustment sign (0=pull-in, 1=push-out)
Read to write command turnaround time adjustment (0–7 clock cycles)
7Read to write command turnaround adjustment sign (0=pull-in, 1=push-out)
Back-to-back command turnaround time adjustment (0–7 clock cycles)
3Back-to-back turnaround adjustment sign (0=pull-in, 1=push-out)
Reserved
System CMD rate mode. 0=JTAG default, otherwise in peculiar units of MTB&#;×&#;tCK/ns.
E.g. if MTB is 1/8 ns, then this is in units of 1/8 clock cycle.
SDRAM auto self refresh performance.
Standard version says documentation is TBD.
Reserved
Reserved, vendor-specific personality code.

All data above are for DDR3 (XMP ); DDR4 specs are not yet available.

Vendor-specific memory[edit]

A common misuse is to write information to certain memory regions to bind vendor-specific memory modules to a specific system. Fujitsu Technology Solutions is known to do this. Adding different memory module to the system usually results in a refusal or other counter-measures (like pressing F1 on every boot).

02 0E 00 00 00 EF 03 19 4D-BC 47 C3 46 M.G.F 53 43 00 EF 4F 8D 1F 01 70 03 C1 CF SCOp

This is the output of a &#;MB memory module from Micron Technologies, branded for Fujitsu-Siemens Computers, note the "FSC" string. The system BIOS rejects memory modules that don't have this information starting at offset h.

Some Packard Bell AMD laptops also use this method, in this case the symptoms can vary but it can lead to a flashing cursor rather than a beep pattern. Incidentally this can also be a symptom of BIOS corruption as well.[27] Though upgrading a 2GB to a 4GB can also lead to issues.

Reading and writing SPD information[edit]

Memory module manufacturers write the SPD information to the EEPROM on the module. Motherboard BIOSes read the SPD information to configure the memory controller. There exist several programs that are able to read and modify SPD information on most, but not all motherboard chipsets.

  • dmidecode program that can decode information about memory (and other things) and runs on Linux, FreeBSD, NetBSD, OpenBSD, BeOS, Cygwin and Solaris. dmidecode does not access SPD information directly; it reports the BIOS data about the memory.[28] This information may be limited or incorrect.
  • On Linux systems, the user space program decode-dimms provided with i2c-tools decodes and prints information on any memory with SPD information in the computer.[29] It requires SMBus controller support in the kernel, the EEPROM kernel driver, and also that the SPD EEPROMs are connected to the SMBus. On older Linux distributions, manicapital.com was available as part of lm_sensors.
  • OpenBSD has included a driver (spdmem(4)) since version to provide information about memory modules. The driver was ported from NetBSD, where it is available since release
  • Coreboot reads and uses SPD information to initialize all memory controllers in a computer with timing, size and other properties.
  • Windows systems use programs like HWiNFO32,[30]CPU-Z and Speccy, which can read and display DRAM module information from SPD.

Chipset-independent reading and writing of SPD information is done by accessing the memory's EEPROM directly with eeprom programmer hardware and software.

A not so common use for old laptops is as generic SMBus readers, as the internal EEPROM on the module can be disabled once the BIOS has read it so the bus is essentially available for use. The method used is to pull low the A0,A1 lines so the internal memory shuts down, allowing the external device to access the SMBus. Once this is done, a custom Linux build or DOS application can then access the external device. A common use is recovering data from LCD panel memory chips to retrofit a generic panel into a proprietary laptop. On some chips it is also a good idea to separate write protect lines so that the onboard chips do not get wiped during reprogramming. A related technique is rewriting the chip on webcams often included with many laptops as the bus speed is substantially higher and can even be modified so that 25x compatible chips can be read back for later cloning of the uEFI in the event of a chip failure.

This unfortunately only works on DDR3 and below, as DDR4 uses different security and can usually only be read. Its possible to use a tool like SPDTool or similar and replace the chip with one that has its WP line free so it can be altered in situ. On some chipsets the message "Incompatible SMBus driver?" may be seen so read is also prevented.

On older equipment[edit]

Some older equipment require the use of SIMMs with parallel presence detect (more commonly called simply presence detect or PD). Some of this equipment uses non-standard PD coding, IBM computers and Hewlett-PackardLaserJet and other printers in particular.

See also[edit]

References[edit]

  1. ^Thomas P. Koenig; Nathan John (3 February ), "Serial Presence Detection poised for limelight", Electronic News, 43 ()
  2. ^JEDEC Standard C section "Definition of the TSEav Serial Presence Detect (SPD) EEPROM with Temperature Sensor (TS) for Memory Module Applications"
  3. ^"TN Memory Module Serial Presence-Detect Write Protection"(PDF). Micron.
  4. ^Application note INNAPN3: SDRAM SPD Data Standards, manicapital.com
  5. ^PC SDRAM Serial Presence Detect (SPD) Specification(PDF), A, December , p.&#;28
  6. ^ abJEDEC Standard C section "SPDs for DDR SDRAM"
  7. ^ abJEDEC Standard C section "Specific SPDs for DDR2 SDRAM"
  8. ^"Understanding DDR3 Serial Presence Detect (SPD) Table".
  9. ^JESDC Annex K: Serial Presence Detect for DDR3 SDRAM Modules, Release 4, SPD Revision
  10. ^JESDC Annex K: Serial Presence Detect for DDR3 SDRAM Modules, Release 6, SPD Revision
  11. ^Delvare, Jean. "[PATCH] eeprom: New ee driver for DDR4 memory". LKML. Retrieved 7 November
  12. ^ abJEDEC. "Annex L: Serial Presence Detect (SPD) for DDR4 SDRAM Modules"(PDF).
  13. ^JEDEC. "EE and TSE Device Specification (Draft)"(PDF). Retrieved 7 November
  14. ^JESDC Annex L: Serial Presence Detect for DDR4 SDRAM Modules, Release 5
  15. ^JEDEC Standard C section "Serial Presence Detect (SPD) for DDR3 SDRAM Modules"
  16. ^JEDEC Standard C section "SERIAL PRESENCE DETECT STANDARD, General Standard"
  17. ^
Источник: [manicapital.com]
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